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| SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. A1 KRA760U~KRA764U EPITAXIAL PLANAR PNP TRANSISTOR B B1 1 6 5 4 D Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. 2 3 DIM A A1 B B1 C D G H MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 A EQUIVALENT CIRCUIT C B R1 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 H T G C C T Q1 Q2 E 1 2 3 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR US6 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage TemperatureRange * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRA760U KRA761U Input Resistor KRA762U KRA763U KRA764U ) SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA MIN. 120 R1 TYP. -0.1 250 4.7 10 100 22 47 Type Name 5 4 MAX. -100 -100 -0.3 - UNIT nA nA V MHz k Marking 6 MARK SPEC TYPE MARK KRA760U PK KRA761U PM KRA762U PN KRA763U PO KRA764U PP 1 2 3 2002. 7. 9 Revision No : 3 1/4 KRA760U~KRA764U ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC KRA760U KRA761U Rise Time KRA762U KRA763U KRA764U KRA760U KRA761U Switching Time Storage Time KRA762U KRA763U KRA764U KRA760U KRA761U Fall Time KRA762U KRA763U KRA764U tf tstg VO=-5V VIN=-5V RL=1k tr SYMBOL TEST CONDITION MIN. TYP. 0.2 0.065 0.4 0.1 0.15 2.0 1.7 3.0 2.0 1.5 0.3 0.3 1.7 0.8 1.5 MAX. S UNIT 2002. 7. 9 Revision No : 3 2/4 KRA760U~KRA764U h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA760U KRA760U I C /IB =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA761U h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA761U I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA762U h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA762U IC /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 7. 9 Revision No : 3 3/4 KRA760U~KRA764U h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA763U KRA763U I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA764U h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA764U I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C 10 -0.1 VCE =-5V -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 7. 9 Revision No : 3 4/4 |
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